Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the release of a ...

Sept. 04, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, ...

Electronics Weekly is proud to announce the finalists for Elektra Awards 2024, the prestigious electronics industry event.

The eco-friendly data centre by design can be defined as data centre designed for maximum energy efficiency and having the ...

Chargeasap's new Zeus 280W USB-C GaN portable charging adapter is one of the most powerful and versatile types, with unique ...

当中国企业跑到全球市场厮杀，势必会受到巨头的反击。捆绑销售、专利纠纷都是他们的常用竞争手段。招股书显示，英诺赛科的若干产品潜在知识产权侵权，被两名竞争对手提出三项诉讼。目前，所有诉讼事项仍处于相对较早阶段。

此外，据业界称，氮化镓的设计和集成度，已经被证明可以成为充当下一代功率半导体，其碳足迹比传统的硅基器件要低10倍，并且氮化镓功率芯片将成为第二次电力电子学革命的催化剂。据业界估计，如果全球采用硅芯片器件的数据中心，都升级为使用氮化镓功率芯片器件，那全球的数据中心将减少30-40% 的能源浪费，相当于节省了 100 兆瓦时太阳能和1.25 亿吨二氧化碳排放量。

盖世汽车讯 据外媒报道，下一代GaNFast™氮化镓（GaN）和GeneSiC™碳化硅（SiC）功率半导体纳微半导体公司（Navitas ...

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