在这一背景下，三大内存原厂均注意到了现有 HBM 键合工艺使用的助焊剂：助焊剂可清理 DRAM Die 表面的氧化层，保证键合过程中机械和电气连接不会受到氧化层影响；但助焊剂的残余也会扩大各 Die 之间的间隙，提升整体堆栈高度。

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