One is the so-called subthreshold swing, or the increase in the gate-to-source voltage needed to boost the on-current tenfold ...

It is concluded that silicon-dioxide-based materials can provide a reliable gate dielectric, even to a thickness of 1 nm, and that CMOS scaling may well be viable to the 50-nm-technology node using ...

Persistent Link: https://ieeexplore.ieee.org/servlet/opac?punumber=55 ...

4 ns rise and 3.5 ns (typical) fall times help to deliver higher efficiency and support high frequency and fast system ...

Recently the combined benefits of the tri-gate CMOS transistor architecture with strained-silicon channels, high-K gate dielectric, metal-gate electrode, and dual epitaxially grown raised source ...

This design idea uses asynchronous RS232 to power and count pulses from a simple 10 kHz voltage-to-frequency converter.

Nexperia has introduced a 110V 4A half-bridge gate driver IC. "NGD4300 has been designed for use with dc-dc converters in ...

At the GlobalFoundries Technology Summit 2024, the theme was “AI Everywhere” as AI has impacted everything from IoT to the ...

Conference Call and Webcast Rigetti will host a conference call later today, November 12, 2024, at 8:30 a.m. ET, or 5:30 a.m. PT, to discuss its third quarter 2024 financial results.

Technology Demonstrator The TC4SoC was designed to demonstrate the major features of a state of the art nanometer (90nm) CMOS technology and the design system required integrate these features. The ...