Researchers from MIT and University of Udine fabricated a transistor that uses ultrathin layers of gallium antimonide and indium arsenide arranged in vertical nanowire heterostructures with a diameter ...
Researchers at the University of Minnesota have achieved a new material that will be pivotal in making the next generation of high-power electronics faster.
Researchers have created a new material that will be pivotal in making the next generation of high-power electronics faster, transparent and more efficient.