As artificial intelligence (AI) technology advances, the demand for higher-performing semiconductors is rapidly growing. The development of new materials and innovative structures to achieve ...
Hongliang Li from College of Materials Science and Engineering, Qingdao University Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by ...
Researchers at the University of Minnesota have achieved a new material that will be pivotal in making the next generation of high-power electronics faster.
Researchers from MIT and University of Udine fabricated a transistor that uses ultrathin layers of gallium antimonide and indium arsenide arranged in vertical nanowire heterostructures with a diameter ...
Pressure Induced Nonmonotonic Evolution of Superconductivity in 6R−TaS2 with a Natural Bulk Van der Waals Heterostructure, Physical Review Letters (2024). DOI: 10.1103/PhysRevLett.133.056001 ...
Researchers have created a new material that will be pivotal in making the next generation of high-power electronics faster, transparent and more efficient.