One is the so-called subthreshold swing, or the increase in the gate-to-source voltage needed to boost the on-current tenfold ...

It is concluded that silicon-dioxide-based materials can provide a reliable gate dielectric, even to a thickness of 1 nm, and that CMOS scaling may well be viable to the 50-nm-technology node using ...

Persistent Link: https://ieeexplore.ieee.org/servlet/opac?punumber=55 ...

4 ns rise and 3.5 ns (typical) fall times help to deliver higher efficiency and support high frequency and fast system ...

Nexperia has introduced a 110V 4A half-bridge gate driver IC. "NGD4300 has been designed for use with dc-dc converters in ...

Recently the combined benefits of the tri-gate CMOS transistor architecture with strained-silicon channels, high-K gate dielectric, metal-gate electrode, and dual epitaxially grown raised source ...

This design idea uses asynchronous RS232 to power and count pulses from a simple 10 kHz voltage-to-frequency converter.

At the GlobalFoundries Technology Summit 2024, the theme was “AI Everywhere” as AI has impacted everything from IoT to the ...

Conference Call and Webcast Rigetti will host a conference call later today, November 12, 2024, at 8:30 a.m. ET, or 5:30 a.m. PT, to discuss its third quarter 2024 financial results.

Technology Demonstrator The TC4SoC was designed to demonstrate the major features of a state of the art nanometer (90nm) CMOS technology and the design system required integrate these features. The ...