Chinese SiC wafer company exhibits first 300mm N-type SiC substrate at Electronica 2024 At Electronica 2024, Chinese SiC wafer company SICC will exhibit what is thought be the first 300mm N-type SiC ...
Companies to use X-Celeprint's micro-transfer printing to build next gen transceivers with silicon photonics and InP integration Specialist foundry X-FAB, and InP photonics foundry SMART Photonics ...
At the heart of an InGaN LED are InGaN quantum wells, buried within a GaN p-n junction. These devices often feature an AlGaN barrier, used to prevent the overflow of electrons from the quantum well.
Cambridge GaN Devices and Qorvo have partnered to bring together motor control and power efficiency technologies in the PAC5556A + ICeGaN evaluation kit (EVK). This collaboration combines Qorvo's high ...
Looking further ahead, Martinovic expects microLEDs, including those he is helping to pioneer, to penetrate the automotive industry, due to their high level of robustness. MicroLEDs may also take ...